Demonstration of GaN Impact Ionization Avalanche Transit-Time (IMPATT) Diode

Conference
DRC
Author

D. Ji, B. Ercan, J. Zhuang, L. Gu, J. Rivas-Davila and S. Chowdhury

Published

July 8, 2020

Doi
Abstract
The following topics are dealt with: III-V semiconductors; wide band gap semiconductors; gallium compounds; random-access storage; field effect transistors; semiconductor growth; aluminium compounds; indium compounds; semiconductor device breakdown; hafnium compounds.