Multiphase GaN Class-D Resonant Amplifier for High-Intensity Focused Ultrasound

Abstract

Focused ultrasound treats tissue deep in the body without damaging surrounding structures. Driven by large-amplitude RF electrical signals, ultrasonic transducers can generate large pressure acoustic wave. Wide-bandgap semiconductors, e.g., Gallium Nitride (GaN), greatly simplify the design and reduce the requisite size and weight of RF amplifiers, and so improves the portability of focused ultrasound device. Here, we demonstrate a compact 8-phase 5 MHz Class-D resonant amplifier for a focused ultrasound cancer therapy application.