27.12MHz GaN Bi-directional resonant power converter
Conference
COMPEL
Abstract
Resonant dc-dc converter regularly use Schottky diodes for high frequency rectification. Si Schottky diodes have relatively low voltage ratings and present reverse-recovery type losses when driven hard enough. SiC Schottky diodes can operate at high frequencies, but incur higher conduction losses. This paper presents a bidirectional dc-dc resonant converter having two ground referenced switches. The prototype converter delivers 400 W between a source of 170 V and a load of 50 V while delivering 250 W in the opposite direction. The converter presented herein can potentially be used in applications such as wireless power transfer, fuel cell and battery applications, bus converters, etc.