Z. Ye, Z. Tong, L. Gu and J. Rivas-Davila, “A High Frequency Resonant Gate Driver for SiC MOSFETs,” 2021 IEEE 22nd Workshop on Control and Modelling of Power Electronics (COMPEL), Cartagena, Colombia, 2021, pp. 1-5, doi: 10.1109/COMPEL52922.2021.9645982.
Abstract:
High power and high-frequency converters for compact power systems have been advanced by the recent development of wide bandgap semiconductor devices. In high power applications, silicon carbide (SiC) devices are reliable with high breakdown voltages but suffer from challenging gate drives at high frequency. This paper presents a resonant gate driver that can effectively reduce the gate loss at high frequency with broad bandwidth. A 13.56 MHz prototype is demonstrated to achieve a 60% loss reduction for a SiC MOSFET gate.
